IndiumV3, Russie, Analysis, bibRecord, 000440

Uniformity of radiation from a laser CRT based on a low-dimensional GaInP/AlGaInP structure with resonance-periodic gain

Identifieur interne : 000440 ( Russie/Analysis ); précédent : 000439; suivant : 000441

Uniformity of radiation from a laser CRT based on a low-dimensional GaInP/AlGaInP structure with resonance-periodic gain

Auteurs : RBID : Pascal:05-0123454

Descripteurs français

Pascal (Inist)
- Laser semiconducteur, Tube cathodique, Gallium Indium Phosphure, Composé ternaire, Aluminium Gallium Indium Phosphure, Méthode MOCVD, Structure périodique, Puits quantique, Pompage faisceau électronique, Hétérostructure, Source lumière, Matière active, Composé III-V, Photoréflectance, Spectre émission, Etude expérimentale, Al Ga In P, AlGaInP, 4255P.

English descriptors

KwdEn :
- Active material, Aluminium Gallium Indium Phosphides, Cathode ray tubes, Electron beam pumping, Emission spectra, Experimental study, Gallium Indium Phosphides, Heterostructures, III-V compound, Light sources, MOCVD, Periodic structures, Photoreflectance, Quantum wells, Semiconductor lasers, Ternary compounds.

Abstract

The metalorganic vapour phase epitaxy was used for growing GaInP/AlGaInP periodic structures with 25 quantum wells. The active elements based on these structures were prepared for a laser longitudinally pumped by a scanning electron beam. The structure is intended for resonance periodic gain in the case when the quantum wells are at the antinodes of the resonator mode corresponding to the peak of the gain line. The effect of the structural inhomogeneities over the thickness (up to 5 %) on the lasing parameters is studied, as well as the temperature detuning from the resonant gain conditions. It is shown that the period of the structure must differ from the optimal value by no more than 0.7% for attaining a 10% uniformity in the lasing threshold along the active element.

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Links to Exploration step

Pascal:05-0123454

Le document en format XML

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<author><name sortKey="Bondarev, V Yu" uniqKey="Bondarev V">V. Yu. Bondarev</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>P. N. Lebedev Physics Institute, Russian Academy of Sciences, Leninskii prosp. 53</s1>
<s2>119991 Moscow</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<placeName><settlement type="city">Moscou</settlement>
<region>District fédéral central</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Kozlovsky, V I" uniqKey="Kozlovsky V">V. I. Kozlovsky</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>P. N. Lebedev Physics Institute, Russian Academy of Sciences, Leninskii prosp. 53</s1>
<s2>119991 Moscow</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
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<country>Russie</country>
<placeName><settlement type="city">Moscou</settlement>
<region>District fédéral central</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Krysa, A B" uniqKey="Krysa A">A. B. Krysa</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>EPSRC National Centre for III-V Technologies, University of Sheffield</s1>
<s3>GBR</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Royaume-Uni</country>
<wicri:noRegion>EPSRC National Centre for III-V Technologies, University of Sheffield</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Popov, Yu M" uniqKey="Popov Y">Yu. M. Popov</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>P. N. Lebedev Physics Institute, Russian Academy of Sciences, Leninskii prosp. 53</s1>
<s2>119991 Moscow</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
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<country>Russie</country>
<placeName><settlement type="city">Moscou</settlement>
<region>District fédéral central</region>
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</author>
<author><name sortKey="Skasyrsky, Ya K" uniqKey="Skasyrsky Y">Ya. K. Skasyrsky</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>P. N. Lebedev Physics Institute, Russian Academy of Sciences, Leninskii prosp. 53</s1>
<s2>119991 Moscow</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
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<country>Russie</country>
<placeName><settlement type="city">Moscou</settlement>
<region>District fédéral central</region>
</placeName>
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</author>
</titleStmt>
<publicationStmt><idno type="inist">05-0123454</idno>
<date when="2004">2004</date>
<idno type="stanalyst">PASCAL 05-0123454 INIST</idno>
<idno type="RBID">Pascal:05-0123454</idno>
<idno type="wicri:Area/Main/Corpus">00A616</idno>
<idno type="wicri:Area/Main/Repository">00A963</idno>
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<seriesStmt><idno type="ISSN">1063-7818</idno>
<title level="j" type="abbreviated">Quantum electron. : (Woodbury N.Y.)</title>
<title level="j" type="main">Quantum electronics : (Woodbury)</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Active material</term>
<term>Aluminium Gallium Indium Phosphides</term>
<term>Cathode ray tubes</term>
<term>Electron beam pumping</term>
<term>Emission spectra</term>
<term>Experimental study</term>
<term>Gallium Indium Phosphides</term>
<term>Heterostructures</term>
<term>III-V compound</term>
<term>Light sources</term>
<term>MOCVD</term>
<term>Periodic structures</term>
<term>Photoreflectance</term>
<term>Quantum wells</term>
<term>Semiconductor lasers</term>
<term>Ternary compounds</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Laser semiconducteur</term>
<term>Tube cathodique</term>
<term>Gallium Indium Phosphure</term>
<term>Composé ternaire</term>
<term>Aluminium Gallium Indium Phosphure</term>
<term>Méthode MOCVD</term>
<term>Structure périodique</term>
<term>Puits quantique</term>
<term>Pompage faisceau électronique</term>
<term>Hétérostructure</term>
<term>Source lumière</term>
<term>Matière active</term>
<term>Composé III-V</term>
<term>Photoréflectance</term>
<term>Spectre émission</term>
<term>Etude expérimentale</term>
<term>Al Ga In P</term>
<term>AlGaInP</term>
<term>4255P</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">The metalorganic vapour phase epitaxy was used for growing GaInP/AlGaInP periodic structures with 25 quantum wells. The active elements based on these structures were prepared for a laser longitudinally pumped by a scanning electron beam. The structure is intended for resonance periodic gain in the case when the quantum wells are at the antinodes of the resonator mode corresponding to the peak of the gain line. The effect of the structural inhomogeneities over the thickness (up to 5 %) on the lasing parameters is studied, as well as the temperature detuning from the resonant gain conditions. It is shown that the period of the structure must differ from the optimal value by no more than 0.7% for attaining a 10% uniformity in the lasing threshold along the active element.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1063-7818</s0>
</fA01>
<fA03 i2="1"><s0>Quantum electron. : (Woodbury N.Y.)</s0>
</fA03>
<fA05><s2>34</s2>
</fA05>
<fA06><s2>10</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Uniformity of radiation from a laser CRT based on a low-dimensional GaInP/AlGaInP structure with resonance-periodic gain</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>BONDAREV (V. Yu.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>KOZLOVSKY (V. I.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>KRYSA (A. B.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>POPOV (Yu. M.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>SKASYRSKY (Ya. K.)</s1>
</fA11>
<fA14 i1="01"><s1>P. N. Lebedev Physics Institute, Russian Academy of Sciences, Leninskii prosp. 53</s1>
<s2>119991 Moscow</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>EPSRC National Centre for III-V Technologies, University of Sheffield</s1>
<s3>GBR</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA20><s1>919-923</s1>
</fA20>
<fA21><s1>2004</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>16067</s2>
<s5>354000126553620070</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2005 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>7 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>05-0123454</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Quantum electronics : (Woodbury)</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>The metalorganic vapour phase epitaxy was used for growing GaInP/AlGaInP periodic structures with 25 quantum wells. The active elements based on these structures were prepared for a laser longitudinally pumped by a scanning electron beam. The structure is intended for resonance periodic gain in the case when the quantum wells are at the antinodes of the resonator mode corresponding to the peak of the gain line. The effect of the structural inhomogeneities over the thickness (up to 5 %) on the lasing parameters is studied, as well as the temperature detuning from the resonant gain conditions. It is shown that the period of the structure must differ from the optimal value by no more than 0.7% for attaining a 10% uniformity in the lasing threshold along the active element.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B40B55P</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Laser semiconducteur</s0>
<s5>50</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Semiconductor lasers</s0>
<s5>50</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Tube cathodique</s0>
<s5>51</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Cathode ray tubes</s0>
<s5>51</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Gallium Indium Phosphure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>52</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Gallium Indium Phosphides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>52</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Composé ternaire</s0>
<s5>53</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Ternary compounds</s0>
<s5>53</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Aluminium Gallium Indium Phosphure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>54</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Aluminium Gallium Indium Phosphides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>54</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Méthode MOCVD</s0>
<s5>56</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>MOCVD</s0>
<s5>56</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Structure périodique</s0>
<s5>57</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Periodic structures</s0>
<s5>57</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Puits quantique</s0>
<s5>58</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Quantum wells</s0>
<s5>58</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Pompage faisceau électronique</s0>
<s5>59</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Electron beam pumping</s0>
<s5>59</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Hétérostructure</s0>
<s5>60</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Heterostructures</s0>
<s5>60</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Source lumière</s0>
<s5>61</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Light sources</s0>
<s5>61</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Matière active</s0>
<s5>62</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Active material</s0>
<s5>62</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Materia activa</s0>
<s5>62</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Composé III-V</s0>
<s5>63</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>III-V compound</s0>
<s5>63</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Compuesto III-V</s0>
<s5>63</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Photoréflectance</s0>
<s5>64</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Photoreflectance</s0>
<s5>64</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Spectre émission</s0>
<s5>65</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Emission spectra</s0>
<s5>65</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Etude expérimentale</s0>
<s5>66</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Experimental study</s0>
<s5>66</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Al Ga In P</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>AlGaInP</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>4255P</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>91</s5>
</fC03>
<fN21><s1>080</s1>
</fN21>
<fN44 i1="01"><s1>PSI</s1>
</fN44>
<fN82><s1>PSI</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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Uniformity of radiation from a laser CRT based on a low-dimensional GaInP/AlGaInP structure with resonance-periodic gain

Uniformity of radiation from a laser CRT based on a low-dimensional GaInP/AlGaInP structure with resonance-periodic gain

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri